| Anzahl | Privatkunde |
|---|---|
| 1+ | 112.66 EUR |
| 10+ | 101.44 EUR |
| 24+ | 87.88 EUR |
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Technische Details MUBW30-12A6K IXYS
Description: IGBT MODULE 1200V 30A 130W E1, Packaging: Box, Package / Case: E1, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: E1, IGBT Type: NPT, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 130 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 1 nF @ 25 V.
Weitere Produktangebote MUBW30-12A6K
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MUBW30-12A6K | IXYS |
Description: IGBT MODULE 1200V 30A 130W E1 Packaging: Box Package / Case: E1 Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: E1 IGBT Type: NPT Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 130 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MUBW30-12A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 21A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 45A Power dissipation: 130W Mechanical mounting: screw Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MUBW30-12A6K | Littelfuse | Trans IGBT Module N-CH 1200V 30A 130000mW 25-Pin |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MUBW30-12A6K |
Hersteller: IXYS
Description: IGBT MODULE 1200V 30A 130W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 130 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: IGBT MODULE 1200V 30A 130W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 130 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUBW30-12A6K |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUBW30-12A6K |
Hersteller: Littelfuse
Trans IGBT Module N-CH 1200V 30A 130000mW 25-Pin
Trans IGBT Module N-CH 1200V 30A 130000mW 25-Pin
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH