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MUBW35-06A6K

MUBW35-06A6K IXYS


MUBW35-06A6K-1548167.pdf
Hersteller: IXYS
Discrete Semiconductor Modules 35 Amps 600V
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Technische Details MUBW35-06A6K IXYS

Description: IGBT MODULE 600V 42A 130W E1, Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V, Current - Collector Cutoff (Max): 750 µA, Power - Max: 130 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 42 A, IGBT Type: NPT, Supplier Device Package: E1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Three Phase Inverter with Brake, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: E1, Packaging: Box.

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MUBW35-06A6K Hersteller : IXYS Description: IGBT MODULE 600V 42A 130W E1
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 42 A
IGBT Type: NPT
Supplier Device Package: E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: E1
Packaging: Box
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