MUH1PCHM3/89A Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 8+ | 0.39 EUR |
| 11+ | 0.27 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.12 EUR |
| 2500+ | 0.1 EUR |
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Technische Details MUH1PCHM3/89A Vishay General Semiconductor
Description: DIODE STANDARD 150V 1A DO219AD, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 150 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-219AD (MicroSMP), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 40 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AD, Packaging: Tape & Reel (TR).
Weitere Produktangebote MUH1PCHM3/89A nach Preis ab 0.12 EUR bis 0.39 EUR
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MUH1PCHM3/89A | Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 150V 1A DO219ADQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-219AD (MicroSMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 40 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AD Packaging: Cut Tape (CT) |
auf Bestellung 1649 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUH1PCHM3/89A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 1A DO219AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 150V 1A DO219AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
auf Bestellung 1649 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 66+ | 0.27 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.12 EUR |