MUN2211JT1G ON Semiconductor
Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R Automotive AEC-Q101
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Technische Details MUN2211JT1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Supplier Device Package: SC-59, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 230 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote MUN2211JT1G nach Preis ab 0.04 EUR bis 0.071 EUR
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MUN2211JT1G | ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R Automotive AEC-Q101 |
auf Bestellung 108000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2211JT1G | ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R Automotive AEC-Q101 |
auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2211JT1G | ONSEMI |
Description: ONSEMI - MUN2211JT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 222000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2211JT1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 222000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MUN2211JT1G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R Automotive AEC-Q101
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R Automotive AEC-Q101
auf Bestellung 108000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13275+ | 0.05 EUR |
| 100000+ | 0.04 EUR |
| MUN2211JT1G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R Automotive AEC-Q101
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R Automotive AEC-Q101
auf Bestellung 99000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13275+ | 0.05 EUR |
| MUN2211JT1G |
|
Hersteller: ONSEMI
Description: ONSEMI - MUN2211JT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MUN2211JT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 222000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15000+ | 0.065 EUR |
| MUN2211JT1G |
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 222000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7869+ | 0.071 EUR |