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MUN2212T1

MUN2212T1 onsemi

MUN2211T1%20Series.pdf
Hersteller: onsemi
Description: TRANS BRT NPN 100MA 50V SC59
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5323+0.099 EUR
Mindestbestellmenge: 5323
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MUN2212T1 onsemi

Description: TRANS BRT NPN 100MA 50V SC59, Packaging: Cut Tape (CT), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Supplier Device Package: SC-59, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 338 mW, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms.

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MUN2212T1 Hersteller : ON MUN2211T1%20Series.pdf SOT23-8B
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH