MUN2231T1G ON Semiconductor
auf Bestellung 75000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 14085+ | 0.04 EUR |
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Technische Details MUN2231T1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Supplier Device Package: SC-59, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 338 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.
Weitere Produktangebote MUN2231T1G nach Preis ab 0.03 EUR bis 0.32 EUR
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MUN2231T1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2231T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2231T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2231T1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 8337 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2231T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2231T1G | Hersteller : ON |
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auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MUN2231T1G | Hersteller : ONSEMI |
Description: ONSEMI - MUN2231T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 264000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2231T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |
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MUN2231T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |