MUN2234T1G ON Semiconductor
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13393+ | 0.04 EUR |
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Technische Details MUN2234T1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-59, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 338 mW, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote MUN2234T1G nach Preis ab 0.04 EUR bis 0.22 EUR
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MUN2234T1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2234T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2234T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2234T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2234T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2234T1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 2484 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2234T1G | Hersteller : ON Semiconductor |
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auf Bestellung 2550 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN2234T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |
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MUN2234T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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MUN2234T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |