MUN5216T1G ON Semiconductor
auf Bestellung 59000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 14085+ | 0.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MUN5216T1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Supplier Device Package: SC-70-3 (SOT323), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 202 mW, Resistor - Base (R1): 4.7 kOhms, Resistors Included: R1 Only.
Weitere Produktangebote MUN5216T1G nach Preis ab 0.04 EUR bis 0.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
MUN5216T1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MUN5216T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 123000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MUN5216T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MUN5216T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MUN5216T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 4.7 kOhms Resistors Included: R1 Only |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
MUN5216T1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 4609 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
MUN5216T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 4.7 kOhms Resistors Included: R1 Only |
auf Bestellung 15900 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| MUN5216T1G |
|
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
| MUN5216T1G | Hersteller : ONSEMI |
Description: ONSEMI - MUN5216T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 339320 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
|
|
MUN5216T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
MUN5216T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
Produkt ist nicht verfügbar |