Technische Details MUN5216T1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SC70-3, Resistors Included: R1 Only, Resistor - Base (R1): 4.7 kOhms, Power - Max: 202 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-70-3 (SOT323), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote MUN5216T1G nach Preis ab 0.042 EUR bis 0.31 EUR
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MUN5216T1G | ON Semiconductor |
 Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5216T1G | ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5216T1G | ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5216T1G | ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 123000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5216T1G | onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Resistors Included: R1 Only Resistor - Base (R1): 4.7 kOhms Power - Max: 202 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70-3 (SOT323) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5216T1G | onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 4609 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5216T1G | onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Resistors Included: R1 Only Resistor - Base (R1): 4.7 kOhms Power - Max: 202 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70-3 (SOT323) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 15900 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5216T1G | ONSEMI |
Description: ONSEMI - MUN5216T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 339320 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5216T1G |
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auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MUN5216T1G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14085+ | 0.046 EUR |
| MUN5216T1G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
auf Bestellung 69000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14085+ | 0.046 EUR |
| MUN5216T1G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14085+ | 0.046 EUR |
| MUN5216T1G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
auf Bestellung 123000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14085+ | 0.046 EUR |
| MUN5216T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Resistors Included: R1 Only
Resistor - Base (R1): 4.7 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SC70-3
Resistors Included: R1 Only
Resistor - Base (R1): 4.7 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.062 EUR |
| 6000+ | 0.055 EUR |
| 9000+ | 0.051 EUR |
| 15000+ | 0.048 EUR |
| MUN5216T1G |
|
Hersteller: onsemi
Digital Transistors 100mA 50V BRT NPN
Digital Transistors 100mA 50V BRT NPN
auf Bestellung 4609 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 0.27 EUR |
| 21+ | 0.17 EUR |
| 100+ | 0.071 EUR |
| 1000+ | 0.063 EUR |
| 3000+ | 0.048 EUR |
| 9000+ | 0.044 EUR |
| 24000+ | 0.042 EUR |
| MUN5216T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Resistors Included: R1 Only
Resistor - Base (R1): 4.7 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V SC70-3
Resistors Included: R1 Only
Resistor - Base (R1): 4.7 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 15900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 0.31 EUR |
| 109+ | 0.19 EUR |
| 178+ | 0.12 EUR |
| 500+ | 0.086 EUR |
| 1000+ | 0.075 EUR |
| MUN5216T1G |
|
Hersteller: ONSEMI
Description: ONSEMI - MUN5216T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - MUN5216T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 339320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15000+ | 0.079 EUR |
| MUN5216T1G |
|
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)