MUN5230T1G ON Semiconductor
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.052 EUR |
| 6000+ | 0.049 EUR |
| 9000+ | 0.038 EUR |
| 24000+ | 0.034 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MUN5230T1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Supplier Device Package: SC-70-3 (SOT323), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 202 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.
Weitere Produktangebote MUN5230T1G nach Preis ab 0.034 EUR bis 0.44 EUR
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MUN5230T1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5230T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5230T1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 18512 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5230T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
auf Bestellung 29129 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5230T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5230T1G | Hersteller : ONSEMI |
Description: ONSEMI - MUN5230T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 321000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5230T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R |
Produkt ist nicht verfügbar |