MUN5230T1G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.075 EUR |
| 6000+ | 0.07 EUR |
| 9000+ | 0.058 EUR |
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Technische Details MUN5230T1G onsemi
Description: TRANS PREBIAS NPN 50V SC70-3, Resistor - Emitter Base (R2): 1 kOhms, Resistor - Base (R1): 1 kOhms, Power - Max: 202 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-70-3 (SOT323), DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote MUN5230T1G nach Preis ab 0.048 EUR bis 0.44 EUR
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MUN5230T1G | onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 18512 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5230T1G | onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
auf Bestellung 29129 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MUN5230T1G |
|
Hersteller: onsemi
Digital Transistors 100mA 50V BRT NPN
Digital Transistors 100mA 50V BRT NPN
auf Bestellung 18512 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.44 EUR |
| 10+ | 0.3 EUR |
| 100+ | 0.12 EUR |
| 1000+ | 0.083 EUR |
| 3000+ | 0.063 EUR |
| 9000+ | 0.051 EUR |
| 24000+ | 0.048 EUR |
| MUN5230T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 29129 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 58+ | 0.31 EUR |
| 118+ | 0.15 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.087 EUR |