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MUN5231DW1T1G

MUN5231DW1T1G onsemi


dtc123ed-d.pdf
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.067 EUR
6000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MUN5231DW1T1G onsemi

Description: TRANS 2NPN PREBIAS 0.25W SOT363, Part Status: Active, Supplier Device Package: SC-88/SC70-6/SOT-363, Resistor - Emitter Base (R2): 2.2kOhms, Resistor - Base (R1): 2.2kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

Weitere Produktangebote MUN5231DW1T1G nach Preis ab 0.074 EUR bis 0.4 EUR

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MUN5231DW1T1G MUN5231DW1T1G onsemi dtc123ed-d.pdf Digital Transistors 100mA 50V BRT NPN
auf Bestellung 57591 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.39 EUR
12+0.24 EUR
100+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
3000+0.074 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MUN5231DW1T1G MUN5231DW1T1G onsemi dtc123ed-d.pdf Description: TRANS 2NPN PREBIAS 0.25W SOT363
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 8900 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
71+0.25 EUR
114+0.16 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
MUN5231DW1T1G dtc123ed-d.pdf
MUN5231DW1T1G
Hersteller: onsemi
Digital Transistors 100mA 50V BRT NPN
auf Bestellung 57591 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.39 EUR
12+0.24 EUR
100+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
3000+0.074 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MUN5231DW1T1G dtc123ed-d.pdf
MUN5231DW1T1G
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 8900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
71+0.25 EUR
114+0.16 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH