MUR2X120A10 GeneSiC Semiconductor
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Technische Details MUR2X120A10 GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 120A SOT-227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 120A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A, Current - Reverse Leakage @ Vr: 25 µA @ 1000 V.
Weitere Produktangebote MUR2X120A10
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MUR2X120A10 | Hersteller : GeneSiC Semiconductor |
 Description: DIODE MOD GP 1000V 120A SOT-227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
Produkt ist nicht verfügbar |
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MUR2X120A10 | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules 1000V 240A Fwd Super Fast Recovery |
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