MURF30020R GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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Technische Details MURF30020R GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A TO244, Packaging: Bulk, Package / Case: TO-244AB, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 150A, Supplier Device Package: TO-244, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A, Current - Reverse Leakage @ Vr: 25 µA @ 200 V.