MURH10060 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A D-67
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-67
Current - Average Rectified (Io): 100A
Technology: Standard
Reverse Recovery Time (trr): 110 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D-67
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produktrezensionen
Produktbewertung abgeben
Technische Details MURH10060 GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A D-67, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: D-67, Current - Average Rectified (Io): 100A, Technology: Standard, Reverse Recovery Time (trr): 110 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: D-67, Packaging: Bulk, Current - Reverse Leakage @ Vr: 25 µA @ 600 V.
Weitere Produktangebote MURH10060
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MURH10060 | Hersteller : GeneSiC Semiconductor |
Diode Modules SI S-FST RECOV D-67 50-600V100A600P/420R |
Produkt ist nicht verfügbar |