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MURH860CT

MURH860CT onsemi

murh860ct-d.pdf
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 4A TO-220
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details MURH860CT onsemi

Description: DIODE ARRAY GP 600V 4A TO-220, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-220, Current - Average Rectified (Io) (per Diode): 4A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.