Technische Details MURHB840CTG ON Semiconductor
Description: DIODE ARRAY GP 400V 4A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 28 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 4A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 4 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote MURHB840CTG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MURHB840CTG | Hersteller : ONSEMI |
 Description: ONSEMI - MURHB840CTG - ULTRAFAST RECTIFIER, CMN CTHD, 8A, D2PAKtariffCode: 85411000 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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MURHB840CTG | Hersteller : ON Semiconductor |
Rectifier Diode Switching 400V 8A 28ns 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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MURHB840CTG | Hersteller : onsemi |
Description: DIODE ARRAY GP 400V 4A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |