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MURT40040R

MURT40040R GeneSiC Semiconductor

murt40040.pdf Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 59 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+323.1 EUR
10+ 287.14 EUR
25+ 273.98 EUR
50+ 264.42 EUR
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Technische Details MURT40040R GeneSiC Semiconductor

Description: DIODE MODULE GP 400V 200A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 180 ns, Technology: Standard, Reverse Polarity, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 200 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.

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MURT40040R MURT40040R Hersteller : GeneSiC Semiconductor murt40040r-1857352.pdf Discrete Semiconductor Modules 400V 400A Super Fast Recovery
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