MURTA40060 GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 289.29 EUR |
| 10+ | 261.73 EUR |
| 24+ | 261.71 EUR |
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Technische Details MURTA40060 GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER, Current - Reverse Leakage @ Vr: 25 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 200A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Weitere Produktangebote MURTA40060
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MURTA40060 | Hersteller : GeneSiC Semiconductor |
 Description: DIODE MODULE GP 600V 200A 3TOWERCurrent - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk |
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