MURTA40060 GeneSiC Semiconductor
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 289.29 EUR |
| 10+ | 261.73 EUR |
| 24+ | 261.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MURTA40060 GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A, Current - Reverse Leakage @ Vr: 25 µA @ 600 V.
Weitere Produktangebote MURTA40060
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MURTA40060 | Hersteller : GeneSiC Semiconductor |
 Silicon Super Fast Recovery Diode |
Produkt ist nicht verfügbar |
||
 |
MURTA40060 | Hersteller : GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
Produkt ist nicht verfügbar |