MV2N5114UB

MV2N5114UB Microchip Technology


Hersteller: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Grade: Military
Qualification: MIL-PRF-19500
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Technische Details MV2N5114UB Microchip Technology

Description: JFET P-CH 30V UB, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 200°C (TJ), FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V, Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: UB, Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Power - Max: 500 mW, Resistance - RDS(On): 75 Ohms, Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA, Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V, Grade: Military, Qualification: MIL-PRF-19500.

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MV2N5114UB MV2N5114UB Hersteller : Microchip Technology LDS_0006-1592455.pdf JFET JFET
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