| Anzahl | Preis |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.48 EUR |
| 3000+ | 0.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MVGSF1N03LT1G onsemi
Description: MOSFET N-CH 30V 1.6A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V, Power Dissipation (Max): 420mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V.
Weitere Produktangebote MVGSF1N03LT1G nach Preis ab 0.48 EUR bis 1.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MVGSF1N03LT1G | Hersteller : onsemi |
 Description: MOSFET N-CH 30V 1.6A SOT23Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V Drain to Source Voltage (Vdss): 30 V |
auf Bestellung 816 Stücke: Lieferzeit 10-14 Tag (e) |
|