| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.54 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| 3000+ | 0.43 EUR |
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Technische Details MVGSF1N03LT1G onsemi
Description: MOSFET N-CH 30V 1.6A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V, Power Dissipation (Max): 420mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V.
Weitere Produktangebote MVGSF1N03LT1G nach Preis ab 0.57 EUR bis 1.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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MVGSF1N03LT1G | onsemi |
 Description: MOSFET N-CH 30V 1.6A SOT23Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V Drain to Source Voltage (Vdss): 30 V |
auf Bestellung 816 Stücke: Lieferzeit 10-14 Tag (e) |
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| MVGSF1N03LT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.6A SOT23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 1.6A SOT23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.57 EUR |
| 20+ | 1.06 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.57 EUR |