Produkte > ONSEMI > MVSF2N02ELT1G
MVSF2N02ELT1G

MVSF2N02ELT1G onsemi


MGSF2N02EL_D-2315656.pdf Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 20V, 2.8A, 85mohm 20V 2.8A 85 mOhm Single N-Channel SOT-23 Logic Level
auf Bestellung 2935 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.97 EUR
10+0.86 EUR
100+0.7 EUR
500+0.64 EUR
1000+0.58 EUR
3000+0.52 EUR
6000+0.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MVSF2N02ELT1G onsemi

Description: MOSFET N-CH 20V 2.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V.

Weitere Produktangebote MVSF2N02ELT1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MVSF2N02ELT1G MVSF2N02ELT1G Hersteller : onsemi mgsf2n02el-d.pdf Description: MOSFET N-CH 20V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MVSF2N02ELT1G Hersteller : ON Semiconductor mgsf2n02el-d.pdf
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MVSF2N02ELT1G Hersteller : ONSEMI mgsf2n02el-d.pdf MVSF2N02ELT1G SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MVSF2N02ELT1G MVSF2N02ELT1G Hersteller : onsemi mgsf2n02el-d.pdf Description: MOSFET N-CH 20V 2.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH