auf Bestellung 1695 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.48 EUR |
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Technische Details MVSF2N02ELT1G onsemi
Description: MOSFET N-CH 20V 2.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V.
Weitere Produktangebote MVSF2N02ELT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MVSF2N02ELT1G | Hersteller : onsemi |
 Description: MOSFET N-CH 20V 2.8A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MVSF2N02ELT1G | Hersteller : ON Semiconductor |
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auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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MVSF2N02ELT1G | Hersteller : onsemi |
Description: MOSFET N-CH 20V 2.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V |
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