| Anzahl | Preis |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MVSF2N02ELT1G onsemi
Description: MOSFET N-CH 20V 2.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V.
Weitere Produktangebote MVSF2N02ELT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MVSF2N02ELT1G | onsemi |
 Description: MOSFET N-CH 20V 2.8A SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MVSF2N02ELT1G | ON Semiconductor |
|
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MVSF2N02ELT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MVSF2N02ELT1G |
|
Hersteller: ON Semiconductor
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH