Technische Details MWI50-12A7T Littelfuse
Description: IGBT MODULE 1200V 85A 350W E2, Packaging: Box, Package / Case: E2, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: E2, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 4 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Weitere Produktangebote MWI50-12A7T
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MWI50-12A7T | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 350W Technology: NPT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MWI50-12A7T | Hersteller : IXYS |
Description: IGBT MODULE 1200V 85A 350W E2 Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: E2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 4 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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MWI50-12A7T | Hersteller : IXYS | IGBT Modules 50 Amps 1200V |
Produkt ist nicht verfügbar |
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MWI50-12A7T | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 350W Technology: NPT Mechanical mounting: screw |
Produkt ist nicht verfügbar |