MX2N5116

MX2N5116 Microchip Technology


124387-lds-0006 Hersteller: Microchip Technology
Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details MX2N5116 Microchip Technology

Description: JFET P-CH 30V TO18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 200°C (TJ), FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V, Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: TO-18, Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Power - Max: 500 mW, Resistance - RDS(On): 175 Ohms, Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA, Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V, Grade: Military, Qualification: MIL-PRF-19500.

Weitere Produktangebote MX2N5116

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MX2N5116 Hersteller : Microsemi 124387-lds-0006 JFET JFET
Produkt ist nicht verfügbar