| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.92 EUR |
| 10+ | 15.46 EUR |
| 100+ | 14.68 EUR |
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Technische Details MXB12R600DPHFC IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; X2-Class; N; 600V; 18A; 130W; i4-pac; 145ns, Type of transistor: N-MOSFET, Technology: X2-Class, Polarisation: N, Drain-source voltage: 600V, Drain current: 18A, Power dissipation: 130W, Case: i4-pac, On-state resistance: 0.16Ω, Mounting: THT, Gate charge: 37nC, Kind of channel: enhancement, Reverse recovery time: 145ns.
Weitere Produktangebote MXB12R600DPHFC nach Preis ab 14.58 EUR bis 27.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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MXB12R600DPHFC | IXYS |
 Description: MOSFET N-CH 600V 15APackaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Supplier Device Package: ISOPLUS i4-PAC™ Drain to Source Voltage (Vdss): 650 V |
auf Bestellung 233 Stücke: Lieferzeit 10-14 Tag (e) |
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| MXB12R600DPHFC |
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Hersteller: IXYS
Description: MOSFET N-CH 600V 15A
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 600V 15A
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 233 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.36 EUR |
| 25+ | 17.04 EUR |
| 50+ | 15.71 EUR |
| 100+ | 14.58 EUR |