MXP120A045FE-T1GE3 Vishay Semiconductors

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 85W, Technology: MaxSiC™; SiC, Mounting: SMD, Case: TO263-7, Kind of package: reel; tape, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Drain current: 31A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, On-state resistance: 99mΩ, Pulsed drain current: 98A, Power dissipation: 85W, Gate charge: 75.6nC.