MXP120A080FE-T1GE3 Vishay Semiconductors

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W, Technology: MaxSiC™; SiC, Mounting: SMD, Case: TO263-7, Kind of package: reel; tape, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Drain current: 19A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, On-state resistance: 0.175Ω, Pulsed drain current: 60A, Power dissipation: 56W, Gate charge: 47.3nC.