
MXPLAD30KP180CAe3 Microchip Technology

Description: TVS DIODE 180VWM 291VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 291V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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Technische Details MXPLAD30KP180CAe3 Microchip Technology
Description: TVS DIODE 180VWM 291VC PLAD, Packaging: Bulk, Package / Case: Nonstandard SMD, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 104A, Voltage - Reverse Standoff (Typ): 180V, Supplier Device Package: PLAD, Bidirectional Channels: 1, Voltage - Breakdown (Min): 200V, Voltage - Clamping (Max) @ Ipp: 291V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No, Part Status: Active, Grade: Military, Qualification: MIL-PRF-19500.
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MXPLAD30KP180CAe3 | Hersteller : Microsemi |
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