Technische Details NAND512R3A2BZA6E ST
Description: IC FLASH 512MBIT PAR 63VFBGA, DigiKey Programmable: Not Verified, Memory Organization: 64M x 8, Access Time: 60 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 60ns, Supplier Device Package: 63-VFBGA (8.5x15), Memory Format: FLASH, Technology: FLASH - NAND, Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 63-VFBGA, Packaging: Tray.
Weitere Produktangebote NAND512R3A2BZA6E
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NAND512R3A2BZA6E | Hersteller : STMicroelectronics |
Description: IC FLASH 512MBIT PAR 63VFBGADigiKey Programmable: Not Verified Memory Organization: 64M x 8 Access Time: 60 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Supplier Device Package: 63-VFBGA (8.5x15) Memory Format: FLASH Technology: FLASH - NAND Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 63-VFBGA Packaging: Tray |
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