NCD57253DWR2G onsemi
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.27 EUR |
| 10+ | 6.28 EUR |
| 25+ | 5.78 EUR |
| 100+ | 5.24 EUR |
| 250+ | 4.96 EUR |
| 1000+ | 4.66 EUR |
| 2000+ | 4.57 EUR |
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Technische Details NCD57253DWR2G onsemi
Description: ISOLATED DUAL CHANNEL MOSFET GAT, Packaging: Tape & Reel (TR), Package / Case: 16-SOIC (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C, Current - Peak Output: 6.5A, 3.5A, Technology: Capacitive Coupling, Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A, Voltage - Isolation: 5000Vrms, Approval Agency: VDE, Supplier Device Package: 16-SOIC, Rise / Fall Time (Typ): 12ns, 10ns, Common Mode Transient Immunity (Min): 100kV/µs, Propagation Delay tpLH / tpHL (Max): 80ns, 80ns, Pulse Width Distortion (Max): 20ns, Number of Channels: 2, Voltage - Output Supply: 0V ~ 32V.
Weitere Produktangebote NCD57253DWR2G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
NCD57253DWR2G | onsemi |
Description: ISOLATED DUAL CHANNEL MOSFET GATPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A, 3.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Pulse Width Distortion (Max): 20ns Number of Channels: 2 Voltage - Output Supply: 0V ~ 32V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
NCD57253DWR2G | onsemi |
Description: ISOLATED DUAL CHANNEL MOSFET GATPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A, 3.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Pulse Width Distortion (Max): 20ns Number of Channels: 2 Voltage - Output Supply: 0V ~ 32V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCD57253DWR2G |
![]() |
Hersteller: onsemi
Description: ISOLATED DUAL CHANNEL MOSFET GAT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A, 3.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 0V ~ 32V
Description: ISOLATED DUAL CHANNEL MOSFET GAT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A, 3.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 0V ~ 32V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCD57253DWR2G |
![]() |
Hersteller: onsemi
Description: ISOLATED DUAL CHANNEL MOSFET GAT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A, 3.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 0V ~ 32V
Description: ISOLATED DUAL CHANNEL MOSFET GAT
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A, 3.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 3.5A, 6.5A, 3.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 0V ~ 32V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


