NCP3418PDR2 onsemi
Hersteller: onsemi
Description: HALF BRIDGE BASED MOSFET DRIVER
Packaging: Bulk
DigiKey Programmable: Not Verified
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Technische Details NCP3418PDR2 onsemi
Description: DUAL BOOTSTRAPPED 12 V MOSFET DR, Logic Voltage - VIL, VIH: 0.8V, 2V, Gate Type: MOSFET (N-Channel), Number of Drivers: 2, Driven Configuration: High-Side and Low-Side, Channel Type: Synchronous, Rise / Fall Time (Typ): 18ns, 10ns, Supplier Device Package: 8-SOIC-EP, High Side Voltage - Max (Bootstrap): 30 V, Input Type: Non-Inverting, Voltage - Supply: 4.6V ~ 13.2V, Operating Temperature: 0°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Bulk.
Weitere Produktangebote NCP3418PDR2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NCP3418PDR2 | onsemi |
Description: DUAL BOOTSTRAPPED 12 V MOSFET DRLogic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: High-Side and Low-Side Channel Type: Synchronous Rise / Fall Time (Typ): 18ns, 10ns Supplier Device Package: 8-SOIC-EP High Side Voltage - Max (Bootstrap): 30 V Input Type: Non-Inverting Voltage - Supply: 4.6V ~ 13.2V Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCP3418PDR2 |
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Hersteller: onsemi
Description: DUAL BOOTSTRAPPED 12 V MOSFET DR
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 18ns, 10ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 30 V
Input Type: Non-Inverting
Voltage - Supply: 4.6V ~ 13.2V
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Bulk
Description: DUAL BOOTSTRAPPED 12 V MOSFET DR
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 18ns, 10ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 30 V
Input Type: Non-Inverting
Voltage - Supply: 4.6V ~ 13.2V
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


