
NCV8440ASTT3G onsemi

Description: MOSFET N-CH 59V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 100µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 59 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V
Output Type: N-Channel
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.6A
Ratio - Input:Output: 1:1
Fault Protection: Over Voltage
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
8+ | 2.2 EUR |
12+ | 1.47 EUR |
100+ | 1.03 EUR |
500+ | 0.9 EUR |
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Technische Details NCV8440ASTT3G onsemi
Description: MOSFET N-CH 59V 2.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V, Power Dissipation (Max): 1.69W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 100µA, Supplier Device Package: SOT-223 (TO-261), Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 59 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V, Output Type: N-Channel, Number of Outputs: 1, Interface: On/Off, Switch Type: General Purpose, Output Configuration: Low Side, Rds On (Typ): 95mOhm, Input Type: Non-Inverting, Voltage - Load: 52V, Voltage - Supply (Vcc/Vdd): Not Required, Current - Output (Max): 2.6A, Ratio - Input:Output: 1:1, Fault Protection: Over Voltage, Grade: Automotive, Qualification: AEC-Q100.
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NCV8440ASTT3G | Hersteller : ON Semiconductor |
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auf Bestellung 3986 Stücke: Lieferzeit 21-28 Tag (e) |
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NCV8440ASTT3G | Hersteller : ON Semiconductor |
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NCV8440ASTT3G | Hersteller : ON Semiconductor |
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NCV8440ASTT3G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V Power Dissipation (Max): 1.69W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 100µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 59 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V Output Type: N-Channel Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Output Configuration: Low Side Rds On (Typ): 95mOhm Input Type: Non-Inverting Voltage - Load: 52V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.6A Ratio - Input:Output: 1:1 Fault Protection: Over Voltage Grade: Automotive Qualification: AEC-Q100 |
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NCV8440ASTT3G | Hersteller : onsemi |
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Produkt ist nicht verfügbar |