NDD01N60T4G ON Semiconductor
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Technische Details NDD01N60T4G ON Semiconductor
Description: MOSFET N-CH 600V 1.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 50µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V.
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NDD01N60T4G | Hersteller : onsemi |
Description: MOSFET N-CH 600V 1.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
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NDD01N60T4G | Hersteller : onsemi | MOSFET NFET DPAK 600V 1.5A 8.5O |
Produkt ist nicht verfügbar |