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NDD03N80ZT4G

NDD03N80ZT4G onsemi

NDD03N80Z.pdf
Hersteller: onsemi
Description: MOSFET N-CH 800V 2.9A DPAK-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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Technische Details NDD03N80ZT4G onsemi

Description: MOSFET N-CH 800V 2.9A DPAK-3, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK-3, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V.

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NDD03N80ZT4G On Semiconductor NDD03N80Z.pdf MOSFET, N-CH, 800V, 2.9A, TO-252-3 Транзистори
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NDD03N80ZT4G NDD03N80ZT4G onsemi NDD03N80Z.pdf Description: MOSFET N-CH 800V 2.9A DPAK-3
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N80ZT4G NDD03N80ZT4G onsemi NDD03N80Z.pdf Description: MOSFET N-CH 800V 2.9A DPAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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NDD03N80ZT4G NDD03N80ZT4G onsemi NDD03N80Z_D-2317463.pdf MOSFET Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
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NDD03N80ZT4G NDD03N80Z.pdf
Hersteller: On Semiconductor
MOSFET, N-CH, 800V, 2.9A, TO-252-3 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N80ZT4G NDD03N80Z.pdf
NDD03N80ZT4G
Hersteller: onsemi
Description: MOSFET N-CH 800V 2.9A DPAK-3
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N80ZT4G NDD03N80Z.pdf
NDD03N80ZT4G
Hersteller: onsemi
Description: MOSFET N-CH 800V 2.9A DPAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.2A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N80ZT4G NDD03N80Z_D-2317463.pdf
NDD03N80ZT4G
Hersteller: onsemi
MOSFET Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH