NDD60N550U1-35G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
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Technische Details NDD60N550U1-35G onsemi
Description: MOSFET N-CH 600V 8.2A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V.
Weitere Produktangebote NDD60N550U1-35G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NDD60N550U1-35G | onsemi |
Description: MOSFET N-CH 600V 8.2A IPAK Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NDD60N550U1-35G | ON Semiconductor |
MOSFET NFET DPAK 600V 8.2A 550MO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NDD60N550U1-35G |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 8.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 600V 8.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDD60N550U1-35G |
|
Hersteller: ON Semiconductor
MOSFET NFET DPAK 600V 8.2A 550MO
MOSFET NFET DPAK 600V 8.2A 550MO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH