NDDL01N60Z-1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 600V 800MA IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1366+ | 0.36 EUR |
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Technische Details NDDL01N60Z-1G onsemi
Description: MOSFET N-CH 600V 800MA IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V.
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Description: MOSFET N-CH 600V 800MA IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V |
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