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NDDP010N25AZT4H

NDDP010N25AZT4H onsemi

nddp010n25az-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
60+1.06 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NDDP010N25AZT4H onsemi

Description: MOSFET N-CH 250V 10A DPAK/TP-FA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V, Power Dissipation (Max): 1W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: DPAK/TP-FA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V.

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NDDP010N25AZT4H NDDP010N25AZT4H Hersteller : ON Semiconductor NDDP010N25AZ-D-601149.pdf MOSFET NCH 10A 250V TP-FA(DPAK)
auf Bestellung 1004 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDDP010N25AZT4H Hersteller : ON Semiconductor nddp010n25az-d.pdf
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDDP010N25AZT4H NDDP010N25AZT4H Hersteller : onsemi nddp010n25az-d.pdf Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDDP010N25AZT4H NDDP010N25AZT4H Hersteller : onsemi nddp010n25az-d.pdf Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH