Technische Details NDF10N62ZG ON Semiconductor
Description: MOSFET N-CH 620V 10A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220FP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V.
Weitere Produktangebote NDF10N62ZG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NDF10N62ZG | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 620V 10A 3-Pin(3+Tab) TO-220FP Rail |
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NDF10N62ZG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 620V 10A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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NDF10N62ZG | Hersteller : onsemi |
Description: MOSFET N-CH 620V 10A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V |
Produkt ist nicht verfügbar |