NDF11N50ZG ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - NDF11N50ZG - MOSFET, N CH, 500V, 12A, TO-220FP-3
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details NDF11N50ZG ONSEMI
Description: MOSFET N-CH 500V 12A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220FP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V.
Weitere Produktangebote NDF11N50ZG
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NDF11N50ZG | Hersteller : onsemi |
Description: MOSFET N-CH 500V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V |
Produkt ist nicht verfügbar |
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NDF11N50ZG | Hersteller : ON Semiconductor |
MOSFET 500V 0.52 OHM TO- 220FP |
Produkt ist nicht verfügbar |