NDH832P Fairchild Semiconductor

Description: MOSFET P-CH 20V 4.2A SUPERSOT8, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSOP (0.130", 3.30mm Width), Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): -8V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Supplier Device Package: SuperSOT™-8.