Technische Details NDP6030PL FAIRCHIL
Description: MOSFET P-CH 30V 30A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 19A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V.
Weitere Produktangebote NDP6030PL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NDP6030PL | onsemi |
 Description: MOSFET P-CH 30V 30A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 19A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
NDP6030PL | ON Semiconductor / Fairchild |
MOSFET P-Ch LL FET Enhancement Mode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NDP6030PL |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 19A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V
Description: MOSFET P-CH 30V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 19A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NDP6030PL |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET P-Ch LL FET Enhancement Mode
MOSFET P-Ch LL FET Enhancement Mode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH