Weitere Produktangebote NDS355N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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NDS355N | Hersteller : ON Semiconductor / Fairchild |
 MOSFET DISC BY MFG 2/02 |
auf Bestellung 9560 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDS355N | Hersteller : Fairchild |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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NDS355N | Hersteller : onsemi |
Description: MOSFET N-CH 30V 1.6A SUPERSOT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V |
Produkt ist nicht verfügbar |
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NDS355N | Hersteller : onsemi |
Description: MOSFET N-CH 30V 1.6A SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V |
Produkt ist nicht verfügbar |