NDS8852H FAI

Description: MOSFET N/P-CH 30V 4.3A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.8V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 3.4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).