Technische Details NDS8926 FAI
Description: MOSFET 2N-CH 20V 5.5A 8SOIC, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Drain to Source Voltage (Vdss): 20V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA.
Weitere Produktangebote NDS8926
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NDS8926 | onsemi |
 Description: MOSFET 2N-CH 20V 5.5A 8SOICFET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5.5A Drain to Source Voltage (Vdss): 20V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA |
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| NDS8926 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 5.5A 8SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: MOSFET 2N-CH 20V 5.5A 8SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH