Technische Details NDS9942 FAI
Description: MOSFET N/P-CH 20V 3A/2.5A 8SOIC, Supplier Device Package: 8-SOIC, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A, Drain to Source Voltage (Vdss): 20V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote NDS9942
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NDS9942 | onsemi |
Description: MOSFET N/P-CH 20V 3A/2.5A 8SOIC Supplier Device Package: 8-SOIC FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Drain to Source Voltage (Vdss): 20V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NDS9942 | onsemi |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NDS9942 |
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 3A/2.5A 8SOIC
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 20V 3A/2.5A 8SOIC
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH