Technische Details NDS9942 FAI
Description: MOSFET N/P-CH 20V 3A/2.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V, Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, FET Feature: Logic Level Gate, Supplier Device Package: 8-SOIC.
Weitere Produktangebote NDS9942
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NDS9942 | onsemi |
Description: MOSFET N/P-CH 20V 3A/2.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NDS9942 | onsemi |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NDS9942 |
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 3A/2.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 20V 3A/2.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH