NDS9952A ON Semiconductor
auf Bestellung 1068 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 764+ | 0.73 EUR |
| 1000+ | 0.66 EUR |
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Technische Details NDS9952A ON Semiconductor
Description: MOSFET N/P-CH 30V 3.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote NDS9952A nach Preis ab 0.66 EUR bis 0.73 EUR
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NDS9952A | Hersteller : ON Semiconductor |
 Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC T/R |
auf Bestellung 3186 Stücke: Lieferzeit 14-21 Tag (e) |
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| NDS9952A | Hersteller : ONSEMI |
NDS9952A Multi channel transistors |
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NDS9952A | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 3.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC |
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NDS9952A | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 3.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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NDS9952A | Hersteller : onsemi / Fairchild |
MOSFETs SO-8 N&P-CH ENHANCE |
Produkt ist nicht verfügbar |