NDSH40120C-F155 onsemi
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 46A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2840pF @ 1V, 100kHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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Technische Details NDSH40120C-F155 onsemi
Description: DIODE SIL CARB 1200V 46A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2840pF @ 1V, 100kHz, Current - Average Rectified (Io): 46A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote NDSH40120C-F155 nach Preis ab 13.66 EUR bis 22.88 EUR
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NDSH40120C-F155 | onsemi |
SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO |
auf Bestellung 865 Stücke: Lieferzeit 10-14 Tag (e) |
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| NDSH40120C-F155 |
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Hersteller: onsemi
SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO
SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO
auf Bestellung 865 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 22.88 EUR |
| 10+ | 16.14 EUR |
| 100+ | 15.72 EUR |
| 450+ | 13.66 EUR |