Technische Details NDT451N FAI
Description: MOSFET N-CH 30V 5.5A SOT-223-4, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote NDT451N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NDT451N | onsemi |
 Description: MOSFET N-CH 30V 5.5A SOT-223-4Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
NDT451N | onsemi |
Description: MOSFET N-CH 30V 5.5A SOT-223-4 Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NDT451N |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 5.5A SOT-223-4
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 5.5A SOT-223-4
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDT451N |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 5.5A SOT-223-4
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 5.5A SOT-223-4
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH