NDTL03N150CG ON Semiconductor
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 166+ | 3.31 EUR |
| 500+ | 3.01 EUR |
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Technische Details NDTL03N150CG ON Semiconductor
Description: MOSFET N-CH 1500V 2.5A TO3P, Packaging: Tube, Package / Case: TO-3PL, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V, Power Dissipation (Max): 2.5W (Ta), 140W (Tc), Supplier Device Package: TO-3P(L), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V.
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Description: MOSFET N-CH 1500V 2.5A TO3P Packaging: Tube Package / Case: TO-3PL Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V Power Dissipation (Max): 2.5W (Ta), 140W (Tc) Supplier Device Package: TO-3P(L) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V |
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