Technische Details NE3509M04-T2-A NEC
Description: RF MOSFET GAAS HJ-FET 2V M04, Packaging: Tape & Reel (TR), Package / Case: SOT-343F, Current Rating (Amps): 60mA, Frequency: 2GHz, Power - Output: 11dBm, Gain: 17.5dB, Technology: GaAs HJ-FET, Noise Figure: 0.4dB, Supplier Device Package: M04, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.
Weitere Produktangebote NE3509M04-T2-A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NE3509M04-T2-A | CEL |
 Description: RF MOSFET GAAS HJ-FET 2V M04Packaging: Tape & Reel (TR) Package / Case: SOT-343F Current Rating (Amps): 60mA Frequency: 2GHz Power - Output: 11dBm Gain: 17.5dB Technology: GaAs HJ-FET Noise Figure: 0.4dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NE3509M04-T2-A |
|
Hersteller: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 2GHz
Power - Output: 11dBm
Gain: 17.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.4dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 2GHz
Power - Output: 11dBm
Gain: 17.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.4dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH