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NE3514S02-T1C-A

NE3514S02-T1C-A CEL

RF-Wireless-Brochure.pdf
Hersteller: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Supplier Device Package: S02
Noise Figure: 0.75dB
Technology: GaAs HJ-FET
Current - Test: 10 mA
Voltage - Test: 2 V
Voltage - Rated: 4 V
Gain: 10dB
Frequency: 20GHz
Current Rating (Amps): 70mA
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details NE3514S02-T1C-A CEL

Description: RF MOSFET GAAS HJ-FET 2V S02, Supplier Device Package: S02, Noise Figure: 0.75dB, Technology: GaAs HJ-FET, Current - Test: 10 mA, Voltage - Test: 2 V, Voltage - Rated: 4 V, Gain: 10dB, Frequency: 20GHz, Current Rating (Amps): 70mA, Package / Case: 4-SMD, Flat Leads, Packaging: Tape & Reel (TR).