Technische Details NE3520S03-A Renesas
Description: RF MOSFET GAAS HJ-FET 2V S03, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Current Rating (Amps): 70mA, Frequency: 20GHz, Gain: 13.5dB, Technology: GaAs HJ-FET, Noise Figure: 0.65dB, Supplier Device Package: S03, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.
Weitere Produktangebote NE3520S03-A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NE3520S03-A | Hersteller : California Eastern Laboratories |
 Trans FET N-CH 4V 70mA GaAs HFET 4-Pin Case S-03 |
Produkt ist nicht verfügbar |
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NE3520S03-A | Hersteller : CEL |
Description: RF MOSFET GAAS HJ-FET 2V S03 Packaging: Bulk Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 20GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.65dB Supplier Device Package: S03 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
Produkt ist nicht verfügbar |